(China (Mainland))
Product Summary
The 2SC3102 is a silicon NPN epitaxial planar type transistor specifically designed for high power amplifiers applications in UHF band.
Parametrics
2SC3102 absolute maximum ratings: (1)VCBO collector to base voltage: 35V; (2)VEBO emitter to base voltage: 4V; (3)VCEO collector to emitter voltage: 17V; (4)IC collector current: 18A; (5)PC collector dissipation: 170W; (6)Tj junction temperature: 175℃; (7)Tstg storage temperature: -55 to 175℃.
Features
2SC3102 features: (1)High power output and high gain: Po≧60W, Gpe≧4.8dB@VCC=12.5V, f=520MHz, Pin=20W; (2)Emitter ballasted construction; (3)High ruggedness: ability to withstand more than 20:1 load VCWR when operated at VCC=15.2V, Po=60W, f=520MHz; (4)High reliability due to gold metalization die; (5)Flange type ceramic package; (6)Zin=1.0+j1.0Ω, Zout=1.1+j1.0Ω@VCC=12.5V, f=520MHz, Po=60W.
Diagrams
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 2SC3000 |
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2SC3011 |
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Negotiable |
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2SC3012 |
Other |
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Negotiable |
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2SC3025 |
Other |
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Negotiable |
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2SC3026 |
Other |
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Negotiable |
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2SC3038 |
Other |
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Negotiable |
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