(China (Mainland))
Product Summary
The BSP613P is a SIPMOS Small-Signal-Transistor.
Parametrics
Absolute maximum ratings: (1)Continuous drain current: -2.9A at TA=25℃, -2.3A at TA=70℃; (2)Pulsed drain current: -11.6 A at TA=25℃; (3)Avalanche energy, single pulse ID=2.9 A , VDD=-25V, RGS=25W: 150 mJ; (4)Avalanche energy, periodic limited by Tjmax: 0.18 mJ; (5)Reverse diode dv/dt IS=2.9A, VDS=-48V, di/dt=-200A/μs, Tjmax=150℃: 6 kV/μs; (6)Gate source voltage: ±20 V.
Features
Features: (1)P-Channel; (2)Enhancement mode; (3)Avalanche rated; (4)dv/dt rated; (5)Ideal for fast switching buck converter. 1149.1; (4)Supports JEDEC Jam Standard Test and Programming Language (STAPL) JESD-71.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 BSP613P L6327 |
Infineon Technologies |
MOSFET SIPMOS Sm-Signal TRANSISTOR |
Data Sheet |
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BSP613P |
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MOSFET P-CH 60V 2.9A SOT-223 |
Data Sheet |
Negotiable |
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